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HMC999

10 Watt GaN Power Amplifier Chip, 0.01 - 10 GHz

Product Details

Data Sheet
ECCN: 3A001.b.2.b

Quality & Reliability

Press & Media

Product Press Release
Product Application Video

Life Cycle Status

Production, Recommended for New Designs
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.01 - 10 GaN MMIC Power Amplifier, 10 Watt 11 47 - 38 +48V @
1100 mA		 Chip

Features

• High Psat: +40 dBm
• High P1dB Output Power: +38 dBm
• Power Gain at Psat: +5.5 dB
• High Output IP3: 47 dBm
• High Gain: 11 dB
• Supply Voltage: +28V, +40V
   or +48V @ 1100 mA
• 50 Ohm Matched Input/Output
• Die Size: 3.66 x 1.91 x 0.1 mm

Typical Applications

• Test Instrumentation
• Military Communications
• Jammers and Decoys
• Radar, EW & ECM Subsystems
• Space

General Description

The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz. The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply. The HMC999 amplifier provides 10 Watts of saturated power in a chip area only 7 mm², equating to a power density of 1.5 W/mm² over 3 decades of bandwidth. All data is taken with the chip connected via two 25 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Functional Diagram