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HMC998

2 Watt Power Amplifier Chip, 0.1 - 22 GHz

Product Details

Data Sheet
S-Parameters
ECCN: 3A001.b.2.c

Quality & Reliability

Qualification Test Reports

Press & Media

Product Press Release
Product Application Video

Life Cycle Status

Production, Recommended for New Designs
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.1 - 22 2 Watt Power Amplifier 12 41 5 31 +15V @
500 mA		 Chip

Features

• High P1dB Output Power: +31 dBm
• High Psat Output Power: +33 dBm
• High Gain: 12 dB
• High Output IP 3: +41 dBm
• Supply Voltage:
   Vdd = +10V to +15 V @ 500 mA
• 50 Ohm Matched Input/Output
• Die Size: 2.99 x 1.84 x 0.1 mm

Typical Applications

• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics

General Description

The HMC998 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 12 dB of gain, 41 dBm output IP3 and +31 dBm of output power at 1 dB gain compression while requiring 500 mA from a +15V supply. This versatile PA exhibits a positive gain slope from 1 to 18 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC998 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Functional Diagram