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HMC995LP5GE

3 Watt Power Amplifier SMT, 12 - 16 GHz

Product Details

Data Sheet
Package Layout
Tape & Reel
ECCN: 3A001.b.2.b

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
12 - 16 3 Watt Power Amplifier
w/ Power Detector		 27 41 - 34.5 +7V @
1200 mA		 LP5G

Features

• Saturated Output Power:
   35.5 dBm @ 24% PAE
• High Output IP3: 41 dBm
• High Gain: 27 dB
• DC Supply: +7V @ 1200 mA
• No External Matching Required

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space

Functional Diagram

General Description

The HMC995LP5GE is a 4 stage GaAs pHEMT MMIC 3 Watt Power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12 and 16 GHz. The HMC995LP5GE provides 27 dB of gain, 35.5 dBm of saturated output power, and 24% PAE from a +7V supply. The HMC995LP5GE exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The HMC995LP5GE amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5 x 5 mm surface mount package and requires no external matching components.