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HMC950

4 Watt Power Amplifier Chip, 12 - 16 GHz

Product Details

Data Sheet
S-Parameters
ECCN: 3A001.b.2.b

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
12 - 16 Power Amplifier, 4 Watt 28 44.5 - 36.5 +7V @ 2400mA Chip

Features

• Saturated Output Power:
    +37 dBm @ 23% PAE
• High Output IP3: +44.5 dBm
• High Gain: 28 dB
• DC Supply: +7V @ 2400 mA
• No External Matching Required
• Die Size: 3.23 x 3.45 x 0.1 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Telecom Infrastructure
• Military & Space

Functional Diagram

General Description

The HMC950 is a four stage GaAs pHEMT MMIC 4 Watt Power Amplifier which operates between 12 and 16 GHz. The HMC950 provides 28 dB of gain, +37 dBm of saturated output power, and 23% PAE from a +7V power supply. The HMC950 has exhibits linearity and is optimized for high capacity point to point and point to multi-point radio systems. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.