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HMC930

0.25 Watt Power Amplifier Chip, DC - 40 GHz

Product Details

Data Sheet
ECCN: 3A001.b.2.d

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 40 Wideband Power Amplifier 13 33.5 5 22 +10V @ 175mA Chip

Features

• High P1dB Output Power: +22 dBm
• High Psat Output Power: 24 dBm
• High Gain: 13 dB
• High Output IP3: +33.5 dBm
• Supply Voltage: +10 V @ 175 mA
• 50 Ohm matched Input/Output
• Die Size: 2.82 x 1.50 x 0.1 mm

Typical Applications

• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics

Functional Diagram

General Description

The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).