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HMC907LP5E

1/2 Watt Power Amplifier SMT, 0.2 - 22 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.2 - 22 Wideband Power Amplifier 12 36 3.5 26 +10V @ 350mA LP5

Features

• High P1dB Output Power: +26 dBm
• High Gain: 12 dB
• High Output IP3: +36 dBm
• Supply Voltage: +10 V @ 350 mA
• 50 Ohm matched Input/Output
• 32 Lead 5x5 mm SMT Package: 25 mm²

Typical Applications

• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics

Functional Diagram

General Description

The HMC907LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907LP5E ideal for EW, ECM, Radar and test equipment applications. The HMC907LP5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.