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HMC907

1/2 Watt Power Amplifier Chip, 0.2 - 22 GHz

Product Details

Data Sheet
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.2 - 22 Wideband Power Amplifier 14 38 3 27 +10V @ 350mA Chip

Features

• High P1dB Output Power: +27 dBm
• High Gain: 14 dB
• High Output IP3: +38 dBm
• Supply Voltage: +10 V @ 350 mA
• 50 Ohm matched Input/Output
• Die Size: 2.91 x 1.33 x 0.1 mm

Typical Applications

• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics

Functional Diagram

General Description

The HMC907 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, 38 dBm output IP3 and +27 dBm of output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is excellent at ±0.6 dB from DC to 12 GHz making the HMC907 ideal for EW, ECM, Radar and test equipment applications. The HMC907 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.