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HMC906

2 Watt Power Amplifier Chip, 27.3 -33.5 GHz

Product Details

Data Sheet
ECCN: 3A001.b.2.d

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
27.3 - 33.5 Power Amplifier, 2 Watt 23 43 - 33 +6V @ 1200mA Chip

Features

• Saturated Output Power:
    +34 dBm @ 22% PAE
• High Gain: 23 dB
• High Output IP3: +43 dBm
• Supply Voltage: +6 V @ 1200 mA
• No External Matching Required
• Die Size: 3.18 x 2.68 x 0.1 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space

Functional Diagram

General Description

The HMC906 is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier which operates between 27.3 and 33.5 GHz. The HMC906 provides 23 dB of gain, and +34 dBm of saturated output power and 22% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).