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HMC797

1 Watt Power Amplifier Chip, DC - 22 GHz

Product Details

Data Sheet
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Product Application Video

Life Cycle Status

Production, Recommended for New Designs
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 22 Wideband Power Amplifier 14.5 40 2.5 28 +10V @ 400mA Chip

Features

• High P1dB Output Power: +28 dBm
• High Psat Output Power: +31 dBm
• High Gain: 14.5 dB
• High Output IP3: +40 dBm
• Supply Voltage: +10 V @ 400 mA
• 50 Ohm matched Input/Output
• Die Size: 2.89 x 1.55 x 0.1 mm

Typical Applications

• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics

General Description

The HMC797 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 14.5 dB of gain, 40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400mA from a +10V supply. This versatile PA exhibits a positive gain slope from DC to 22 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Functional Diagram