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HMC757

1/2 Watt Power Amplifier Chip, 16 - 24 GHz

Product Details

Data Sheet
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
16 - 24 Power Amplifier, 1/2 Watt 22 37 - 29 +7V @ 395mA Chip

Features

• Saturated Output Power:
   +30 dBm @ 30% PAE
• High Output IP3: +37 dBm
• High Gain: 22 dB
• DC Supply: +7V @ 395 mA
• 50 Ohm Matched Input/Output
• Die Size: 2.4 x 0.9 x 0.1 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space

Functional Diagram

General Description

The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip- Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).