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HMC755LP4E

1 Watt Power Amplifier SMT, 2.3 - 2.8 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
2.3 - 2.8 Power Amplifier, 1 Watt 31 43 7 32.5 +5V @ 430mA LP4

Features

High Gain: 31 dB
High PAE: 28% @ +33 dBm Pout
Low EVM: 2.5% @ Pout = +25 dBm
    with 54 Mbps OFDM Signal
High Output IP3: +43 dBm
Integrated Detector & Power Control
24 Lead 4x4mm QFN Package: 16mm

Typical Applications

Cellular/3G & LTE/4G
WiMAX, WiBro & Fixed Wireless
Military & SATCOM
Test Equipment

Functional Diagram

General Description

The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components.