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HMC669LP3 / HMC669LP3E

LNA with Failsafe Bypass Mode SMT, 1700 - 2200 MHz

Product Details

Data Sheet
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
1.7 - 2.2 Low Noise with Failsafe Bypass 17 29 1.4 12 +5V @ 86mA LP3

Features

• Noise Figure: 1.4 dB
• Output IP3: +29 dBm
• Gain: 17 dB
• Failsafe Operation: Bypass is
   enabled when LNA is unpowered
• Single Supply: +3V or +5V
• 16 Lead 3x3mm SMT Package: 9mm²

Typical Applications

• Cellular/3G & LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Tower Mounted Amplifiers
• Test & Measurement Equipment

Functional Diagram

General Description

The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm IP3 from a single supply of +5V @ 86mA. Input and output return losses are excellent and no external matching components are required. A single control line is used to switch between LNA mode and a low loss bypass mode. Failsafe topology also enables the LNA bypass path when no DC power is available.