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HMC637LP5 / HMC637LP5E

1W Power Amplifier SMT, DC - 6 GHz

Product Details

Data Sheet
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 6 Wideband Power Amp 13 40 5 29 +12V @ 400mA LP5

Features

• P1dB Output Power: +29 dBm
• Gain: 13 dB
• Output IP3: +40 dBm
• 50 Ohm Matched Input/Output
• 32 Lead 5x5mm SMT Package: 25mm²

Typical Applications

• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics

Functional Diagram

General Description

The HMC637LP5(E) is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +40 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HMC637LP5(E) ideal for EW, ECM, Radar and test equipment applications. The HMC637LP5(E) amplifier I/Os are internally matched to 50 ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment.