HMC637

Features

• P1dB Output Power: +29 dBm
• Gain: 14 dB
• Output IP3: +41 dBm
• Bias Supplies: +12V, +6V, -1V
• 50 Ohm Matched Input/Output
• Die Size: 2.98 x 2.48 x 0.1 mm

Typical Applications

• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics

Functional Diagram

General Description

The HMC637 is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637 ideal for EW, ECM, Radar and test equipment applications.

The HMC637 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).