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HMC636ST89 / HMC636ST89EHigh IP3 SMT Amplifier, 0.2 - 4.0 GHz |
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Product Details
Data Sheet |
Quality & Reliability |
Press & Media |
| Freq. (GHz) | Function | Gain (dB) | OIP3 (dBm) | NF (dB) | P1dB (dBm) | Bias Supply | Package |
|---|---|---|---|---|---|---|---|
| 0.2 - 4.0 | Low Noise, High IP3 | 13 | 40 | 2.2 | 22 | +5V @ 155mA | ST89 |
Features• Low Noise Figure: 2.2 dB• High P1dB Output Power: +22 dBm • High Output IP3: +40 dBm • Gain: 13 dB • 50 Ohm I/O’s - No External Matching • Industry Standard SOT89 Package |
Typical Applications• Cellular / PCS / 3G |
Functional Diagram |
General DescriptionThe HMC636ST89(E) is a GaAs PHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components. The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness. |
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Hittite Microwave (Chelmsford, MA USA) is an ISO 9001:2008 and AS9100:2009 Certified Designer and Manufacturer
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