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HMC635

Driver Amplifier Chip, 18 - 40 GHz

Product Details

Data Sheet
Application Notes
S-Parameters
ECCN: 3A001.b.2.d

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
18 - 40 Wideband Driver 19.5 29 8 23 +5V @ 280mA Chip

Features

• Gain: 19.5 dB
• P1dB: +23 dBm
• Output IP3: +29 dBm
• Saturated Power: 
   +24 dBm @ 15% PAE
• Supply Voltage: +5V @ 280 mA
• 50 Ohm Matched Input/Output<
• Die Size: 1.95 x 0.84 x 0.10 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space

Functional Diagram

General Description

The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length.