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HMC633

Driver Amplifier Chip, 5 - 17 GHz

Product Details

Data Sheet
Application Notes
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
5 - 17 Wideband Driver 29 30 8 23 +5V @ 180mA Chip

Features

• Gain: 29 dB
• P1dB: +23 dBm
• Output IP3: +30 dBm
• Saturated Power: 
   +24 dBm @ 27% PAE
• Supply Voltage: +5V @ 180 mA
• 50 Ohm Matched Input/Output
• Die Size: 2.07 x 0.93 x 0.1 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space

Functional Diagram

General Description

The HMC633 is a GaAs MMIC PHEMT Driver Amplifier die which operates between 5 and 17 GHz. The amplifier provides up to 31 dB of gain, +30 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC633 is an ideal driver amplifier for microwave radio applications from 5 to 17 GHz, and may also be biased at +5V, 130 mA to provide 2 dB lower gain with improved PAE.


The HMC633 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via one 1 mil wedge bond with minimal length of 0.31 mm (12 mils).