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HMC619

Power Amplifier Chip, DC - 10 GHz

Product Details

Data Sheet
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 10 Wideband Power Amplifier 12 41 5 28.5 +12V @ 300mA Chip

Features

  • P1dB Output Power: +28 dBm
  • Gain: 12.8 dB
  • Output IP3: +37 dBm
  • Supply Voltage: +12V @ 300 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.12 x 1.50 x 0.1 mm

Typical Applications

• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics

Functional Diagram

General Description

The HMC619 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 10 GHz. The amplifier provides 12.8 dB of gain, +37 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 300 mA from a +12V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip- Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).