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HMC609

Low Noise Amplifier Chip, 2 - 4 GHz

Product Details

Data Sheet
Application Notes
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
2 - 4 Low Noise 20.5 36 3 21 +6V @ 170mA Chip

Features

  • Gain Flatness: 0.2 dB
  • Output IP3: +36 dBm
  • Gain: 20.5 dB
  • Output P1dB: +22 dBm
  • 50 Ohm Matched Input/Output
  • Die Size: 2.11 x 1.32 x 0.10 mm

Typical Applications

• Fixed Microwave
• Point-to-Multi-Point Radios
• Test & Measurement Equipment
• Radar & Sensors
• Military & Space

Functional Diagram

General Description

The HMC609 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 2 to 4 GHz. The HMC609 features extremely flat performance characteristics including 20dB of small signal gain, 3dB of noise figure and output IP3 of +36 dBm across the operating band. The versatile LNA is ideal for hybrid and MCM assemblies due to its compact size, consistent output power and DC blocked RF I/O's. All data is measured with the chip in a 50 Ohm test fixture connected via one 0.025 mm (1 mil) diameter bondwire of minimal length 0.31 mm (12 mil).