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HMC606

Wideband Low Phase Noise Amplifier Chip, 2 - 18 GHz

Product Details

Data Sheet
Application Notes
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain / NF (dB) OIP3 (dBm) 10 kHz SSB Phase Noise (dBc/Hz) P1dB / Psat (dBm) Bias Supply Package
2 - 18 Low Phase Noise 14 / 4.5 27 -160 15 / 18 +5V @ 64mA Chip

Features

  • Ultra Low Phase Noise:
        -160 dBc/Hz @ 10 kHz
  • P1dB Output Power: +15 dBm
  • Gain: 14 dB
  • Output IP3: +27 dBm
  • Supply Voltage: +5V @64mA
  • 50 Ohm Matched Input/Output
  • Die Size: 2.11 x 1.32 x 0.10 mm

Typical Applications

• Radar, EW & ECM
• Microwave Radio
• Test Instrumentation
• Military & Space
• Fiber Optic Systems

Functional Diagram

General Description

The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise perfor-mance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers.


The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output powe at 1 dB gain compression which requiring 64 mA from a +5V supply. The HMC606 amplifier I/O's are internally mateched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mil).