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HMC592

1 Watt Power Amplifier Chip, 10 - 13 GHz

Product Details

Data Sheet
Application Notes
ECCN: 3A001.b.2.b

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
10 - 13 Power Amplifier, 1 Watt 19 39 - 31 +7V @ 750mA Chip

Features

  • Saturated Output Power:
        +31 dBm @ 21% PAE
  • Output IP3: +38 dBm
  • Gain: 19 dB
  • DC Supply: +7.0 V @ 750 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 2.47 x 1.17 x 0.1 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space



Functional Diagram

General Description

The HMC592 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 10 to 13 GHz. This amplifier die provides 19 dB of gain and +31 dBm of saturated power, at 21% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).


All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 400 mA, to yield +38 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 750 mA, to yield +31 dBm Output P1dB.