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1 Watt Power Amplifier Chip, 6 - 10 GHz

Product Details

Data Sheet
Application Notes
ECCN: 3A001.b.2.b

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
6 - 10 Power Amplifier, 1 Watt 25 41 - 31.5 +7V @ 820mA Chip


  • Saturated Output Power:
        +31.5 dBm @ 25% PAE
  • Output IP3: +41 dBm
  • Gain: 24 dB
  • DC Supply: +7V @ 820 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 2.47 x 1.33 x 0.1 mm

Typical Applications

• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space

Functional Diagram

General Description

The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).

All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB.