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HMC580ST89 / HMC580ST89E

InGaP HBT Gain Block SMT, DC - 1 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 1 HBT Gain Block 22 37 2.8 22 +5V @ 88mA ST89

Features

  • P1dB Output Power: +22 dBm
  • Gain: 22 dB
  • Output IP3: +37 dBm
  • Cascadable 50 Ohm I/Os
  • Single Supply: +5V

Typical Applications

• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications

Functional Diagram

General Description

The HMC580ST89(E) is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 1 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +26 dBm output power. The HMC580ST89(E) offers 22 dB of gain with a +37 dBm output IP3 at 250 MHz, and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.