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HMC509LP5 / HMC509LP5E

VCO SMT with Fo/2, 7.8 - 8.8 GHz

Product Details

Data Sheet
Application Notes
Package Layout
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Featured Article
Product Press Release

Life Cycle Status

Production, Recommended for New Designs
Fo Freq. (GHz) Fo/2 Freq. (GHz) Function Fo Output Power (dBm) 10 kHz SSB Phase Noise (dBc/Hz) 100 kHz SSB Phase Noise (dBc/Hz) Package
7.8 - 8.8 3.9 - 4.4 VCO with Fo/2 13 -90 -115 LP5


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Features

• Dual Output: Fo = 7.8 - 8.8 GHz
   Fo/2 = 3.9 - 4.4 GHz
• Pout: +13 dBm
• Phase Noise: -115 dBc/Hz @100 kHz Typ.
• No External Resonator Needed
• QFN Leadless SMT Package, 25 mm²

Typical Applications

• VSAT Radio
• Point-to-Point/Multi-Point Radio
• Test Equipment & Industrial Controls
• Military End-Use

Functional Diagram


HMC509LP5 Functional Diagram

General Description

The HMC509LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC509LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.