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HMC464

Wideband Power Amplifier Chip, 2 - 20 GHz

Product Details

Data Sheet
Application Notes
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
2 - 20 Wideband Power Amplifier 16 30 4 26 +8V @ 290mA Chip

Features

• P1dB Output Power: +26 dBm
• Gain: 16 dB
• Output IP3: +30 dBm
• Supply Voltage: +8V @ 290 mA
• 50 Ohm Matched Input/Output
• Die Size: 3.12 x 1.63 x 0.1 mm

Typical Applications

• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics

Functional Diagram


HMC464 Functional Diagram

General Description

The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).