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HMC461LP3 / HMC461LP3E

1 Watt High IP3 Amplifier SMT, 1.7 - 2.2 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
1.7 - 2.2 Power Amplifier, 1 Watt 12 45 6 29.5 +5V @ 300mA LP3


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Features

• +45 dBm Output IP3
   (Balanced Configuration)
• 12 dB Gain
• 48% PAE @ +30.5 dBm Pout
• +20 dBm W-CDMA
   Channel Power @ -45 dBc ACP
• 3x3 mm QFN SMT Package

Typical Applications

• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• PHS
• Balanced or Push-Pull Configurable

Functional Diagram


HMC461LP3 Functional Diagram

General Description

The HMC461LP3(E) is a 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC amplifiers. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be configured in a balanced or push-pull amplifier circuit. The amplifier provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced configuration.

 

The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 make the HMC461LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifier IC. The LP3 provides an exposed base for excellent RF and thermal performance.