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HMC457QS16G / HMC457QS16GE

1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Designer & Eval Kits
Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
1.7 - 2.2 Power Amplifier, 1 Watt 27 46 5 30.5 +5V @ 500mA QS16G

Features

• Output IP3: +46 dBm
• Gain: 27 dB @ 1900 MHz
   48% PAE @ +32 dBm Pout
• +25 dBm W-CDMA Channel Power
   @ -50 dBc ACPR
• Integrated Power Control (Vpd)
• QSOP16G SMT Package: 29.4 mm²
• Included in the
   HMC-DK002 Designer’s Kit

Typical Applications

• CDMA & W-CDMA
• GSM, GPRS & Edge
• Base Stations & Repeaters

Functional Diagram


HMC457QS16G Functional Diagram

General Description

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.