Custom Design

Sample Requests

Submit Inquiry

My Subscription

HMC457QS16G / HMC457QS16GE

1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz

Product Details

Data Sheet
Application Notes
Package Layout
Tape & Reel

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Designer & Eval Kits
Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Product Change Notification

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
1.7 - 2.2 Power Amplifier, 1 Watt 27 46 5 30.5 +5V @ 500mA QS16G


• Output IP3: +46 dBm
• Gain: 27 dB @ 1900 MHz
   48% PAE @ +32 dBm Pout
• +25 dBm W-CDMA Channel Power
   @ -50 dBc ACPR
• Integrated Power Control (Vpd)
• QSOP16G SMT Package: 29.4 mm²
• Included in the
   HMC-DK002 Designer’s Kit

Typical Applications

• GSM, GPRS & Edge
• Base Stations & Repeaters

Functional Diagram

HMC457QS16G Functional Diagram

General Description

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.