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HMC455LP3 / HMC455LP3E

½ Watt High IP3 Amplifier SMT, 1.7 - 2.5 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
1.7 - 2.5 High IP3 Amplifier, 1/2 Watt 13 42 6 27 +5V @ 150mA LP3

Features

• Output IP3: +42 dBm
• Gain: 13 dB
• 56% PAE @ +28 dBm Pout
• +19 dBm W-CDMA
   Channel Power @ -45 dBc ACP
• 3x3 mm QFN SMT Package

Typical Applications

• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & WCDMA
• PHS

Functional Diagram


HMC455LP3 Functional Diagram

General Description

The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.