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HMC452QS16G / HMC452QS16GE

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.45 - 2.2 Power Amplifier, 1 Watt 22.5 48 7 30 +5V @ 485mA QS16G

Features

• Output IP3: +48 dBm
• 22.5 dB Gain @ 400 MHz
• 9 dB Gain @ 2100 MHz
• 53% PAE @ +31 dBm Pout
• +24 dBm CDMA2000
    Channel Power@ -45 dBc ACP
• Single +5V Supply
• Integrated Power Control (VPD)
• QSOP16G SMT Package: 29.4 mm²

Typical Applications

• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL

Functional Diagram


HMC452QS16G Functional Diagram

General Description

The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.