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HMC450QS16G / HMC450QS16GE

Power Amplifier SMT, 0.8 - 1.0 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Designer & Eval Kits
Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Product Change Notification

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.8 - 1.0 Medium Power Amplifier 26 40 8 26 +5V @ 310mA QS16G

Features

• Gain: 26 dB
• 32% PAE @ 28.5 dBm Output Power
• +40 dBm Output IP3
• Integrated Power Control (Vpd)
• Included in the
   HMC-DK002 Designer’s Kit

Typical Applications

• GSM, GPRS, & Edge
• CDMA & WCDMA
• Base Stations & Repeaters

Functional Diagram

HMC440QS16G Functional Diagram

General Description

The HMC450QS16G(E) is a high efficiency GaAs InGaP HBT Medium Power MMIC amplifier operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.6 - 2.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G(E) an ideal linear driver for Cellular, PCS & 3G applications.