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HMC450QS16G / HMC450QS16GEPower Amplifier SMT, 0.8 - 1.0 GHz |
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Product Details
Data Sheet |
Quality & Reliability |
Press & Media |
| Freq. (GHz) | Function | Gain (dB) | OIP3 (dBm) | NF (dB) | P1dB (dBm) | Bias Supply | Package |
|---|---|---|---|---|---|---|---|
| 0.8 - 1.0 | Medium Power Amplifier | 26 | 40 | 8 | 26 | +5V @ 310mA | QS16G |
Features• Gain: 26 dB• 32% PAE @ 28.5 dBm Output Power • +40 dBm Output IP3 • Integrated Power Control (Vpd) • Included in the HMC-DK002 Designer’s Kit |
Typical Applications• GSM, GPRS, & Edge |
Functional Diagram![]() |
General DescriptionThe HMC450QS16G(E) is a high efficiency GaAs InGaP HBT Medium Power MMIC amplifier operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.6 - 2.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G(E) an ideal linear driver for Cellular, PCS & 3G applications. |
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Hittite Microwave (Chelmsford, MA USA) is an ISO 9001:2008 and AS9100:2009 Certified Designer and Manufacturer
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