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HMC415LP3 / HMC415LP3E

InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
4.9 - 5.9 Medium Power Amplifier 20 32 6 22 +3V @ 285mA LP3

Features

• Gain: 20 dB
• 34% PAE @ Psat = +26 dBm
• 3.7% EVM @ Pout = +15 dBm
• with 54 Mbps OFDM Signal
• Supply Voltage: +3 V
• Power Down Capability
• Low External Part Count

Typical Applications

• 802.11a WLAN
• HiperLAN WLAN
• Access Points
• UNII & ISM Radios

Functional Diagram


HMC415LP3 Functional Diagram

General Description

The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.