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HMC414MS8G / HMC414MS8GE

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Product Change Notification

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
2.2 - 2.8 Power Amplifier, 1/2 Watt 20 39 7 27 +5V @ 300mA MS8G


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Features

• Gain: 20 dB
• Saturated Power: +30 dBm
• 32% PAE
• Supply Voltage: +2.75V to +5V
• Power Down Capability
• Low External Part Count

Typical Applications

• BLUETOOTH
• MMDS

Functional Diagram


HMC414MS8G Functional Diagram

General Description

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.