Custom Design

Sample Requests

Submit Inquiry

My Subscription

Home

HMC413QS16G / HMC413QS16GE

Power Amplifier SMT, 1.6 - 2.2 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Designer & Eval Kits
Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
1.6 - 2.2 Medium Power Amplifier 22 40 5.5 27 +3.6V @ 270mA QS16G

Features

• Gain: 23 dB
• Saturated Power: +29.5 dBm 42% PAE
• Supply Voltage: +2.75V to +5V
• Power Down Capability
• Low External Part Count
• Included in the
   HMC-DK002 Designer’s Kit

Typical Applications

• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop

Functional Diagram


HMC413QS16G Functional Diagram

General Description

The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.