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HMC407MS8G / HMC407MS8GE

InGaP HBT Power Amplifier SMT, 5 - 7 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
5 - 7 Medium Power Amplifier 15 40 5.5 25 +5V @ 230mA MS8G

Features

• Gain: 15 dB
• Saturated Power: +29 dBm
• 28% PAE
• Supply Voltage: +5V
• Power Down Capability
• No External Matching Required

Typical Applications

• UNII
• HiperLAN

Functional Diagram


HMC407MS8G Functional Diagram

General Description

The HMC407MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.