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HMC406MS8G / HMC406MS8GE

InGaP HBT Power Amplifier SMT, 5 - 6 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Product Change Notification

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
5 - 6 Medium Power Amplifier 18 38 6 26 +5V @ 300mA MS8G

Features

• Gain: 17 dB
• Saturated Power: +29 dBm
• 38% PAE
• Supply Voltage: +5V
• Power Down Capability
• Low External Part Count

Typical Applications

• UNII
• HiperLAN & 802.11a WLAN

Functional Diagram


HMC406MS8G Functional Diagram

General Description

The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/current control.