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HMC397

InGaP HBT Gain Block Amplifier Chip, DC - 10 GHz

Product Details

Data Sheet
Application Notes
S-Parameters
ECCN: EAR99

Quality & Reliability

Qualification Test Reports
Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 10 HBT Gain Block 15 24 4.5 13 +5V @ 56mA Chip

Features

• Gain: 15 dB
• P1dB Output Power: +15 dBm
• Stable Gain Over Temperature
• 50 Ohm I/O’s
• Small Size: 0.38 x 0.58 x 0.1 mm

Typical Applications

• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C³I
• Space Telecom

Functional Diagram

HMC397 Functional Diagram

General Description

The HMC397 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 10 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC397 offers 15 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply.


The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC397 can easily be integrated into Multi- Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).