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HMC373LP3 / HMC373LP3E

Low Noise Amplifier SMT w/Bypass, 0.7 - 1.0 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
0.7 - 1.0 Low Noise 14 35 0.9 21 +5V @ 90mA LP3

Features

• Noise Figure: 0.9 dB
• Output IP3: +35 dBm
• Gain: 14 dB
• Low Loss LNA Bypass Path
• Single Supply: +5V @ 90 mA
• 50 Ohm Matched Output

Typical Applications

• GSM, GPRS & EDGE
• CDMA & W-CDMA
• Private Land Mobile Radio

Functional Diagram


HMC373LP3 Functional Diagram

General Description

The HMC373LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5V @ 90 mA.


Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2 dB loss bypass mode reducing the current consumption to 10 μA. For applications which require improved noise figure, please see the HMC668LP3(E).