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HMC351S8 / HMC351S8EHigh IP3 DBL-BAL Mixer SMT, 0.7 - 1.2 GHz |
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Product Details
Data Sheet |
Quality & Reliability |
Press & Media
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| RF Freq. (GHz) | Function | IF Freq. (GHz) | Conv. Gain (dB) | LO/RF Isol. (dB) | IIP3 (dBm) | Package |
|---|---|---|---|---|---|---|
| 0.7 - 1.2 | High IP3, DBL-BAL | DC - 0.3 | -9 | 42 | 25 | S8 |
Features• Conversion Loss: 9 dB• LO/IF Isolation: 35 dB • LO/RF Isolation: 42 dB • Input IP3: +25 dBm • Input IP2: +48 dBm |
Typical Applications• Cellular Basestations |
Functional Diagram![]() |
General DescriptionThe HMC351S8(E) is a double balanced mixer in 8 lead plastic surface mount package. The passive GaAs schottky diode mixer implements planar on chip baluns and requires no external components. The mixer can be used as an upconverter, down converter, or modulator. The mixer provides 9 dB conversion loss and +25 dBm IIP3 with LO drive levels of +19 dBm. The design was optimized for low cost high volume applications where high converter linearity is required. The high LO suppression of 42 dB yields excellent carrier suppression for modulator applications. |
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Hittite Microwave (Chelmsford, MA USA) is an ISO 9001:2008 and AS9100:2009 Certified Designer and Manufacturer
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