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HMC327MS8G / HMC327MS8GE

MMIC Power Amplifier SMT, 3 - 4 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
3 - 4 Power Amplifier, 1/2 Watt 21 40 5 27 +5V @ 250mA MS8G

Features

• Gain: 21 dB
• Saturated Power: +30 dBm
• 45% PAE
• Supply Voltage: +5V
• Power Down Capability
• Low External Part Count

Typical Applications

• Wireless Local Loop

Functional Diagram


HMC327MS8G Functional Diagram

General Description

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.