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HMC313 / HMC313E

InGaP HBT Gain Block Amplifier SMT, DC - 6 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media

Designer & Eval Kits
Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 6 HBT Gain Block 17 27 6.5 14 +5V @ 50mA SOT26

Features

• P1dB Output Power: +14 dBm
• Output IP3: +27 dBm
• Gain: 17 dB
• Single Supply: +5V
• High Reliability GaAs HBT Process
• Ultra Small Package: SOT26
• Included in the
   HMC-DK001 Designer’s Kit

Typical Applications

• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5 - 6 GHz UNII & HiperLAN

Functional Diagram


HMC313 Functional Diagram

General Description

The HMC313(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313(E) offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. The “HMC313 Biasing and Impedance Matching Techniques” application note available within the “Application Notes” section offers recommendations for narrow band operation.