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HMC311LP3 / HMC311LP3E

InGaP HBT Gain Block Amplifier SMT, DC - 6 GHz

Product Details

Data Sheet
Application Notes
Package Layout
S-Parameters
Tape & Reel
ECCN: EAR99

Quality & Reliability

Environmental Data Sheet
Qualification Test Reports

Press & Media
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 6 HBT Gain Block 14.5 32 4.5 15.5 +5V @ 56mA LP3

Features

• P1dB Output Power: +15.5 dBm
• Output IP3: +32 dBm
• Gain: 14.5 dB
• 50 Ohm I/O’s
• 16 Lead 3x3 mm SMT Package: 9mm²

Typical Applications

• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio

Functional Diagram


HMC311LP3 Functional Diagram

General Description

The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.