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8 Watt GaN MMIC Power Amplifier, 2 - 20 GHz

Product Details

Data Sheet
ECCN: 3A001.b.2.c

Quality & Reliability

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

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Freq. (GHz) Function Gain (dB) OIP3 (dBm) Psat (dBm) Power Gain at Psat (dB) Bias Supply Package
2 - 20 8 Watt GaN MMIC Power Amplifier 11 45 39 5.5 +28V @ 850 mA Chip


• High Psat: +39 dBm
• Power Gain at Psat: +5.5 dB
• High Output IP3: +45 dBm
• Small Signal Gain: 11 dB
• Supply Voltage: +28V @ 850 mA
• 50 Ohm Matched Input/Output
• Die Size: 2 x 4 x 0.1 mm

Typical Applications

• Test Instrumentation
• General Communications
• Radar

Functional Diagram

HMC1087 Functional Diagram

General Description

The HMC1087 is an 8W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 20 GHz. The amplifier typically provides 11dB of small signal gain, +39 dBm of saturated output power, and +45 dBm output IP3 at +29 dBm output power per tone. The HMC1087 draws 850 mA quiescent current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was aquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.