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HMC1022

0.25 Watt Power Amplifier Chip, DC - 48 GHz

Product Details

Data Sheet
ECCN: 3A001.b.2.f

Quality & Reliability

Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
DC - 48 Wideband Power Amplifier 12 32 - 22 +10V @ 150 mA Chip

Features

• High P1dB Output Power: 22 dBm
• High Psat Output Power: 24 dBm
• High Gain: 12 dB
• High Output IP3: 32 dBm
• Supply Voltage: +10 V @ 150 mA
• 50 Ohm Matched Input/Output
• Die Size: 2.82 x 1.50 x 0.1 mm

Typical Applications

• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics

Functional Diagram

General Description

The HMC1022 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 48 GHz. The amplifier provides 12 dB of gain, 32 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 150 mA from a +10 V supply. The HMC1022 exhibits a slightly positive gain slope from 10 to 35 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC1022 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).