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HMC-XTB110

Passive x3 Frequency Multiplier, 24 - 30 GHz Input

Product Details

Data Sheet
ECCN: 5A991.h

Quality & Reliability

Waffle-Pak & Gel-Pak

Press & Media

Product Press Release
Input Freq. (GHz) Function Output Freq. (GHz) Conv. Loss (dB) 1Fo / 4Fo Isolation (dB) Input Drive (dBm) Package
24 - 30 Passive x3 72 - 90 19 - +13 Chip

Features

• Conversion Loss: 19 dB
• Input Drive: +13 dBm
• Passive: No DC Bias Required
• Die Size: 1.1 x 1.4 x 0.1 mm

Typical Applications

• FCC E-Band Communication Systems
• Short-Haul / High Capacity Radios
• Automotive Radar
• Test & Measurement Equipment

Functional Diagram

HMC-XTB110 Functional Diagram

General Description

The HMC-XTB110 is a monolithic x3 Passive Frequency Multiplier which utilizes GaAs Shottky Diode technology, and exhibits low conversion loss and high Fo isolation. This wideband x3 multiplier requires no DC power, and is targeted to high volume applications where frequency x3 of a lower frequency is more economical than directly generating a higher frequency.


All bond pads and the die backside are Ti/Au metallized and the Shottky diode devices are fully passivated for reliable operation. The HMC-XTB110 Passive x3 MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.