Welcome: Guest
Register | Log in |
Order History
Shopping Cart: 0 Items







HMC-AUH312Amplifier - Microwave and Wideband |
|
Product Details |
Quality & Reliability |
Press & Media |
| Freq. (GHz) | Function | Gain (dB) | Group Delay Variation (ps) | Additive Jitter (ps) | P1dB (dBm) | Output Voltage Level (V-p-p) | Package |
|---|---|---|---|---|---|---|---|
| 0.5 - 65 | Wideband Optical Driver | 10 | - | - | - | 2.5 | Chip |
Features• Small Signal Gain: >8 dB• 65 GHz Distributed Amplifier • Can be configured with and w/o Bias-Tees for Vd and Vg1 bias • Low Power Dissipation: 300 mW with Bias Tee @ Vdd = 5V 360 mW w/o Bias Tee @ Vdd = 6V 480 mW w/o Bias Tee @ Vdd = 8V • Small Die Size: 1.2 x 1.0 x 0.1 mm |
Typical Applications• Fiber Optic Modulator Driver |
Functional Diagram |
General DescriptionThe HMC-AUH312 is a GaAs MMIC HEMT low power Distributed Driver Amplifier die which operates between 500 MHz and 65 GHz and provides a typical 3 dB bandwidth in excess of 65 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5V peak to peak, which makes it ideal for use in broadband wireless, fiber optic communication and test equipment applications.
The amplifier die occupies 1.2 mm² which facilitates easy integration into Multi-Chip-Modules (MCMs). The HMC-AUH312 can be used with or without a bias-tee and requires off-chip blocking components and bypass capacitors for the DC supply lines. Adjustable gate voltages allow for gain adjustment. |
||
Hittite Microwave (Chelmsford, MA USA) is an ISO 9001:2000 and AS9100 B Certified Designer and Manufacturer
978-250-3343 | sales@hittite.com | 2000 - 2010 Hittite Microwave Corporation | Legal Notice | Privacy Policy

