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HMC-ALH508

Low Noise Amplifier Chip, 71 - 86 GHz

Product Details

Data Sheet
S-Parameters
ECCN: EAR99

Quality & Reliability

Waffle-Pak & Gel-Pak

Press & Media

Product Press Release

Life Cycle Status

Production, Recommended for New Designs

Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
71 - 86 Low Noise 13 - 5 7 +2.4V @ 30mA Chip

Features

• Noise Figure: <5 dB
• P1dB: +7 dBm
• Gain: 13 dB
• Supply Voltage: +2.4V
• 50 Ohm Matched Input / Output
• Die Size: 3.2 x 1.6 x 0.1 mm

Typical Applications

• Short Haul / High Capacity Links
• Wireless LANs
• Automotive Radar
• Military & Space
• E-Band Communication Systems

Functional Diagram

HMC-ALH508 Functional Diagram

General Description

The HMC-ALH508 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz. The HMC-ALH508 features 13 dB of small signal gain, 4.5 dB of noise figure and an output power of +7 dBm at 1 dB compression from two supply voltages at 2.1V and 2.4V respectively. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.


This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.