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For Immediate Release

1 Watt InGaP HBT Power Amplifier for UNII & WLAN



Chelmsford, MA 06/16/2002 -

Hittite Microwave introduces a highly efficient 5.1 to 5.9 GHz GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power Amplifier with +30 dBm P1dB output power and +43 dBm output IP3. The HMC408LP3 power amplifier is ideal for low cost UNII PT-PT/Multi-PT and 802.11a/HiperLAN WLAN access point applications. The power amplifier provides 20dB of gain and +32.5 dBm of saturated power at 27% PAE from a single +5.0V supply. A Power Down (Vpd) input provides RF output power and DC current control. The input of the HMC408LP3 is internally matched to 50 ohms and requires minimal external output matching components. Packaged in a low cost, leadless 3mm x 3.0mm surface mount package with an exposed base, the HMC408LP3 offers the UNII/WLAN designer the smallest footprint and lowest single supply operating voltage for a 1 Watt 5 to 6 GHz PA. Sample and production quantities are available from stock. Data sheets are available on our web site, www.hittite.com.

 

Hittite Microwave Corporation is an innovative designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. The Company's standard and custom products apply analog, digital and mixed-signal semiconductor technologies, which are used in a wide variety of wireless / wired communication and sensor applications for Automotive, Broadband, Cellular Infrastructure, Fiber Optics & Networking, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets. The Company is headquartered in Chelmsford, Massachusetts.

PR Contact: Beth McGreevy, MarCom Manager beth.mcgreevy@hittite.com

Print Version

Hittite Microwave Corporation
2 Elizabeth Drive
Chelmsford, MA 01824
978-250-3343 phone
978-250-3373 fax
www.hittite.com