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For Immediate Release
High Linearity Gain Blocks Deliver +40 dBm OIP3
Wide Dynamic Range Amplifiers Serve IF and RF Applications from 50 MHz to 4 GHz!Chelmsford, Ma 06/20/2008 -
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced two new SMT packaged GaAs pHEMT MMIC Gain Block Amplifiers which are ideal for automotive, broadband, CATV, cellular/3G, WiMAX/4G and fixed wireless applications from 50 MHz to 4 GHz.
The HMC636ST89E and the HMC639ST89E are GaAs pHEMT based High Linearity Gain Block Amplifiers which require no external matching making them ideal as replacements for competitor products such as the AH-1 and the AM-1 gain blocks in IF and RF applications from 50 MHz to 4 GHz.
The HMC636ST89E High Linearity Gain block Amplifier is rated from 200 MHz to 4 GHz, and delivers 13 dB gain, +40 dBm output IP3, and noise figure as low as 2.2 dB. The HMC639ST89E High Linearity Gain block Amplifier is rated from 200 MHz to 4 GHz, and delivers 13 dB gain, +38 dBm output IP3, and noise figure as low as 2.3 dB.
These 50 Ohm cascadable amplifiers are packaged in industry standard RoHS compliant SOT89 packages, and will serve various IF and RF requirements in cellular/3G, WiMAX/4G, and software defined radio applications.
The HMC636ST89E and HMC639ST89E are powered directly from a single +5V supply and consume 155 mA and 104 mA of current respectively. The internally matched topology permits these amplifiers to be readily ported between virtually any printed circuit board material, regardless of its dielectric constant, thickness or composition.
Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.
Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.
PR Contact: Beth McGreevy, MarCom Manager mcgreevy@hittite.com
Print VersionHittite Microwave Corporation
20 Alpha Rd.,
Chelmsford, MA 01824
978-250-3343 phone
978-250-3373 fax
www.hittite.com