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For Immediate Release

Compact Up/Downconverter RFIC Covers 1.8 to 3.9 GHz

Highly Integrated RFIC is ideal for Cellular/3G and WiMAX/LTE/4G Infrastructure

Chelmsford, Ma 05/02/2008 -

 Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new GaAs MMIC Mixer RFIC which is ideal for upconversion and downconversion in virtually all wireless infrastructure applications including Cellular/3G and WiMAX/LTE/4G systems from 1.8 to 3.9 GHz.

The HMC622LP4E GaAs MMIC Mixer RFIC incorporates a high dynamic range, double-balanced mixer core with integrated LO and IF amplifiers in a single MCM.  This highly integrated converter can be configured for upconversion and downconversion applications from 1.8 to 3.9 GHz, making it ideal for compact transceiver applications in GSM, WCDMA, TD-SCDMA, WiBro and WiMAX/LTE. The HMC622LP4E operates with a low LO input power level of only +3 dBm and delivers 9 dB conversion gain, +23 dBm input IP3, and +70 dBm input IP2 in downconversion mode.  In upconversion mode, the HMC622LP4E provides up to 12 dB conversion gain with the same low LO drive. The HMC622LP4E features singled-ended LO, RF and IF ports, and can support intermediate frequencies from 200 to 550 MHz, while the wide LO frequency range of 1.8 to 3.9 GHz supports both low side and high side LO frequency plans. 

The HMC622LP4E is housed in a RoHS compliant leadless 4x4 mm QFN SMT package, and consumes only 175 mA from a single +5V supply.

Samples and evaluation PC boards for all SMT packaged products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.

Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.

PR Contact: Beth McGreevy, MarCom Manager mcgreevy@hittite.com

Print Version

Hittite Microwave Corporation
20 Alpha Rd.,
Chelmsford, MA 01824
978-250-3343 phone
978-250-3373 fax
www.hittite.com