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For Immediate Release

Low Noise MMIC VCOs for C-Band Applications

Chelmsford, MA 12/10/2002 -

Hittite Microwave is pleased to introduce a pair of GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes and buffer amplifiers operating between 5.0 and 6.1 GHz. The HMC430LP4 and HMC431LP4 are ideally suited for C-band applications such as 802.11a and HiperLAN WLAN, VSAT radios, UNII and Point-to-Point Radios.

The HMC430LP4 provides +2 dBm buffered output, -103 dBc/Hz @ 100 kHz phase noise from a +3V @27 mA single supply voltage over 5.0 to 5.5 GHz. The HMC431LP4 provides +2 dBm buffered output, -102 dBc/Hz @ 100 kHz phase noise from a +3V @27 mA single supply voltage over 5.5 to 6.1 GHz. The phase noise performance of both products is excellent over temperature, shock, and process due to the oscillator's monolithic structure. In addition, both the HMC430LP4 and the HMC431LP4 are packaged in low cost leadless QFN 4x4mm surface mount packages.

Sample and production quantities are available from stock and may be ordered via our website. Released data sheets are also available on-line at

Hittite Microwave Corporation is an innovative designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. The Company's standard and custom products apply analog, digital and mixed-signal semiconductor technologies, which are used in a wide variety of wireless / wired communication and sensor applications for Automotive, Broadband, Cellular Infrastructure, Fiber Optics & Networking, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets. The Company is headquartered in Chelmsford, Massachusetts.

PR Contact: Beth Hildreth, MarCom Manager

Print Version

Hittite Microwave Corporation
2 Elizabeth Drive
Chelmsford, MA 01824
978-250-3343 phone
978-250-3373 fax